发明申请
- 专利标题： Method of manufacturing a silicide layer
- 专利标题（中）： 硅化物层的制造方法
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申请号： US11088984申请日： 2005-03-24
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公开(公告)号： US20050215003A1公开(公告)日： 2005-09-29
- 发明人: Junji Oh , Yuka Hayami , Ryou Nakamura
- 申请人： Junji Oh , Yuka Hayami , Ryou Nakamura
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2004-089052 20040325
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02 ; H01L21/265 ; H01L21/285 ; H01L21/336 ; H01L21/44 ; H01L21/4763 ; H01L21/8238 ; H01L27/092 ; H01L29/78
摘要：
There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.
公开/授权文献
- US07294577B2 Method of manufacturing a silicide layer 公开/授权日：2007-11-13
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