- 专利标题: Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates
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申请号: US11029215申请日: 2005-01-03
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公开(公告)号: US20050215046A1公开(公告)日: 2005-09-29
- 发明人: Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
- 申请人: Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C25D5/02 ; C25D5/10 ; H01L21/44 ; H01L21/4763
摘要:
Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
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