发明申请
- 专利标题： Ferroelectric memory element and its manufacturing method
- 专利标题（中）： 铁电存储元件及其制造方法
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申请号： US11089432申请日： 2005-03-24
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公开(公告)号： US20050218443A1公开(公告)日： 2005-10-06
- 发明人: Hiroaki Tamura , Teruo Tagawa
- 申请人： Hiroaki Tamura , Teruo Tagawa
- 优先权： JP2004092013 20040326
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; G11C11/22 ; H01L21/02 ; H01L21/316 ; H01L21/8239 ; H01L21/8246 ; H01L27/10 ; H01L27/108 ; H01L27/115 ; H01L29/76
摘要：
A ferroelectric capacitor is covered with a hydrogen barrier film, and an inner wall of a contact hole provided above an upper electrode of the ferroelectric capacitor is also covered with a hydrogen barrier film, thereby preventing hydrogen from infiltrating in the ferroelectric capacitor through a contact hole.
信息查询
IPC分类:
