发明申请
US20050223991A1 Faraday dose and uniformity monitor for plasma based ion implantation
有权
法拉第剂量和均匀度监测器用于等离子体离子注入
- 专利标题: Faraday dose and uniformity monitor for plasma based ion implantation
- 专利标题(中): 法拉第剂量和均匀度监测器用于等离子体离子注入
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申请号: US10817755申请日: 2004-04-02
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公开(公告)号: US20050223991A1公开(公告)日: 2005-10-13
- 发明人: Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
- 申请人: Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
- 主分类号: H01J37/244
- IPC分类号: H01J37/244 ; H01J37/32 ; C23C14/48
摘要:
A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.