发明申请
- 专利标题： Forming self-aligned nano-electrodes
- 专利标题（中）： 形成自对准纳米电极
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申请号： US10819790申请日： 2004-04-07
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公开(公告)号： US20050224778A1公开(公告)日： 2005-10-13
- 发明人: Valery Dubin , Swaminathan Sivakumar , Andrew Berlin , Mark Bohr
- 申请人： Valery Dubin , Swaminathan Sivakumar , Andrew Berlin , Mark Bohr
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L29/788 ; H01L51/00 ; H01L51/30
摘要：
A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using spacer technology, the gap between the electrodes may be made very small.
公开/授权文献
- US07312155B2 Forming self-aligned nano-electrodes 公开/授权日：2007-12-25
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