发明申请
US20050224834A1 LIght-emitting semiconductor device using group III nitrogen compound
有权
使用III族氮化合物的发光半导体器件
- 专利标题: LIght-emitting semiconductor device using group III nitrogen compound
- 专利标题(中): 使用III族氮化合物的发光半导体器件
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申请号: US11143664申请日: 2005-06-03
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公开(公告)号: US20050224834A1公开(公告)日: 2005-10-13
- 发明人: Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
- 申请人: Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
- 申请人地址: JP Aichi-ken
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi-ken
- 优先权: JP76514/1994 19940322; JP113484/1994 19940428; JP197914/1994 19940728
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/32 ; H01L33/38 ; H01L33/40
摘要:
A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.