发明申请
US20050224913A1 Devices comprising aluminum oxide and metal oxide dielectric materials, capacitor constructions, and methods of forming capacitor constructions
失效
包括氧化铝和金属氧化物电介质材料的器件，电容器结构以及形成电容器结构的方法
- 专利标题： Devices comprising aluminum oxide and metal oxide dielectric materials, capacitor constructions, and methods of forming capacitor constructions
- 专利标题（中）： 包括氧化铝和金属氧化物电介质材料的器件，电容器结构以及形成电容器结构的方法
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申请号： US10822062申请日： 2004-04-08
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公开(公告)号： US20050224913A1公开(公告)日： 2005-10-13
- 发明人: Vishwanath Bhat , F. Gealy , Cancheepuram Srividya
- 申请人： Vishwanath Bhat , F. Gealy , Cancheepuram Srividya
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02 ; H01L21/316 ; H01L21/8242
摘要：
The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.
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