发明申请
- 专利标题： Tunnel magnetoresistance device
- 专利标题（中）： 隧道磁阻器件
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申请号： US11100616申请日： 2005-04-07
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公开(公告)号： US20050225905A1公开(公告)日： 2005-10-13
- 发明人: Ryonosuke Tera , Inao Toyoda , Yasutoshi Suzuki
- 申请人： Ryonosuke Tera , Inao Toyoda , Yasutoshi Suzuki
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2004-114243 20040408
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; G11B5/127 ; G11B5/33 ; G11B5/39 ; G11C11/15 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L43/10 ; H01L43/12
摘要：
The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.
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