发明申请
US20050226025A1 Semiconductor memory device for sensing voltages of bit lines in high speed 有权
用于高速感测位线电压的半导体存储器件

  • 专利标题: Semiconductor memory device for sensing voltages of bit lines in high speed
  • 专利标题(中): 用于高速感测位线电压的半导体存储器件
  • 申请号: US11017641
    申请日: 2004-12-22
  • 公开(公告)号: US20050226025A1
    公开(公告)日: 2005-10-13
  • 发明人: Khil-Ohk Kang
  • 申请人: Khil-Ohk Kang
  • 优先权: KR2004-22180 20040331
  • 主分类号: G11C5/06
  • IPC分类号: G11C5/06 G11C7/06 G11C7/18 G11C11/4091 G11C11/4097
Semiconductor memory device for sensing voltages of bit lines in high speed
摘要:
The present invention relates to a semiconductor memory device for sensing voltages of bit lines in high speed. The semiconductor memory device for sensing voltages of bit lines in high speed includes: a first bit line pair to a fourth bit line pair each coupled to a different unit cell array; a bit line sense amplifying means coupled to the first bit line pair to the fourth bit line pair for amplifying data transmitted through the first bit line pair to the fourth bit line pair; and a switching block for connecting one of the first bit line pair to the fourth bit line pair with the bit line sense amplifying means in response to a control signal.
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