发明申请
US20050227498A1 Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
有权
用于制造应变的绝缘体上硅结构和由此形成的应变硅绝缘体结构的方法
- 专利标题: Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby
- 专利标题(中): 用于制造应变的绝缘体上硅结构和由此形成的应变硅绝缘体结构的方法
-
申请号: US10814482申请日: 2004-03-31
-
公开(公告)号: US20050227498A1公开(公告)日: 2005-10-13
- 发明人: Toshiharu Furukawa , Charles Koburger , James Slinkman
- 申请人: Toshiharu Furukawa , Charles Koburger , James Slinkman
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/762 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L21/469
摘要:
A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.