Invention Application
- Patent Title: Xenon ion beam to improve track width definition
- Patent Title (中): 氙离子束提高轨道宽度定义
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Application No.: US10827950Application Date: 2004-04-20
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Publication No.: US20050231856A1Publication Date: 2005-10-20
- Inventor: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
- Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
- Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee: Headway Technologies, Inc.,TDK Corporation
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G11B5/127 ; G11B5/33 ; G11B5/39 ; H01F10/32 ; H01F41/30

Abstract:
A GMR read pillar formed by ion milling has both vertical and sloping sidewall sections with the free layer normally being located within the latter. Using xenon as the sputtering gas enables the vertical section of the pedestal to be made longer, relative to the sloping portion, without requiring an increase in the sputtering rate, so the free layer can have vertical sidewalls. This allows the point at which milling is terminated to be controlled more precisely and, by more precisely defining the width of the free layer, also improves design tolerances.
Public/Granted literature
- US07320170B2 Xenon ion beam to improve track width definition Public/Granted day:2008-01-22
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