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19 条记录 (耗时 0.011 秒)

    CPP head with parasitic shunting reduction
    2.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US07279269B2

    公开(公告)日：2007-10-09

    申请号：US10734422

    申请日：2003-12-12

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    CPP head with parasitic shunting reduction
    3.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US07864490B2

    公开(公告)日：2011-01-04

    申请号：US11901584

    申请日：2007-09-18

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    CPP head with parasitic shunting reduction
    6.
    发明申请
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US20050130070A1

    公开(公告)日：2005-06-16

    申请号：US10734422

    申请日：2003-12-12

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G03F7/00 ,  G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    Single layer resist liftoff process for nano track width
    8.
    发明授权
    Single layer resist liftoff process for nano track width 有权
    纳米轨道宽度的单层抗剥离工艺

    公开(公告)号：US08236484B2

    公开(公告)日：2012-08-07

    申请号：US10714305

    申请日：2003-11-14

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Chunping Luo ,  Shou-Chen Kao

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Chunping Luo ,  Shou-Chen Kao

    IPC分类号： G03F7/40

    CPC分类号： G11B5/3163 ,  G03F7/40 ,  G03F7/405 ,  G11B5/3903

    摘要： As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.

    摘要翻译： 随着脱模模式的关键尺寸越来越小，制备具有所需分辨率的剥离抗蚀剂变得越来越困难。 通过使用离子束处理和臭氧纤维化的组合来克服这个问题，以形成具有来自单层光致抗蚀剂的底切的剥离图案。 离子束工艺用于使抗蚀剂的顶部硬化，同时使用臭氧来氧化和腐蚀下部抗蚀剂侧壁以形成底切。