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1.发明授权公开(公告)号：US06776891B2
公开(公告)日：2004-08-17
申请号：US09859363
申请日：2001-05-18
Applicant: Chaopeng Chen , Kevin Lin , Jei Wei Chang
Inventor： Chaopeng Chen , Kevin Lin , Jei Wei Chang
IPC: C25D356
CPC classification number: C25D5/18 , C25D3/562 , C25D5/006 , C25D7/001 , G11B5/3109 , G11B5/3163 , H01F10/16 , H01F41/26 , Y10T428/115 , Y10T428/12493
Abstract: A method for forming a plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100−a−bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.
Abstract translation: 一种用于形成具有一般形式Co100-a-bFeaMb的高饱和磁化强度和低矫顽力的镀覆磁性薄膜的方法，其中M可以是Mo，Cr，W，Ni或Rh，其适用于磁记录头， 写在狭窄的轨道宽度，高矫顽力的媒体。 电镀方法包括四个当前应用过程：直流，脉冲电流，脉冲反向电流和调节脉冲反向电流。
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公开(公告)号：US07810227B2
公开(公告)日：2010-10-12
申请号：US11975247
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the dielectric and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部 自由层已形成。 其次是以通常的方式形成电介质和导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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公开(公告)号：US20080040914A1
公开(公告)日：2008-02-21
申请号：US11975247
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC: G11B5/127
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部 自由层已形成。 然后以通常的方式形成纵向偏置和导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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公开(公告)号：US08087157B2
公开(公告)日：2012-01-03
申请号：US11975266
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 使用一束氙离子与合适的掩模，MTJ堆叠被离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有包括垂直部分的侧壁的基座包括全部 自由层已形成。 然后以通常的方式形成纵向偏置和导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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公开(公告)号：US20050000600A1
公开(公告)日：2005-01-06
申请号：US10909529
申请日：2004-08-02
Applicant: Chaopeng Chen , Kevin Lin , Jei Chang
Inventor： Chaopeng Chen , Kevin Lin , Jei Chang
CPC classification number: C25D5/18 , C25D3/562 , C25D5/006 , C25D7/001 , G11B5/3109 , G11B5/3163 , H01F10/16 , H01F41/26 , Y10T428/115 , Y10T428/12493
Abstract: A method for forming a plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100-a-bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.
Abstract translation: 一种用于形成具有一般形式Co100-a-bFeaMb的高饱和磁化强度和低矫顽力的镀覆磁性薄膜的方法，其中M可以是Mo，Cr，W，Ni或Rh，其适用于磁记录头， 写在狭窄的轨道宽度，高矫顽力的媒体。 电镀方法包括四个当前应用过程：直流，脉冲电流，脉冲反向电流和调节脉冲反向电流。
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Patent Agency Ranking
公开(公告)号：US08256096B2
公开(公告)日：2012-09-04
申请号：US11975265
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 将氙离子束与合适的掩模一起使用，将堆叠物离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有侧壁的基座包括垂直部分和缩短的锥形部分 ，已经形成。 随后根据需要形成导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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公开(公告)号：US20080043378A1
公开(公告)日：2008-02-21
申请号：US11975267
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: We describe a family of magnetic read heads that each includes a GMR or MTJ stack. A part, no more than about 0.1 microns thick, has been removed from this stack a to form a pedestal having sidewalls comprising a vertical section that includes all of the free layer.
Abstract translation: 我们描述了一系列磁头，每个磁头都包含一个GMR或MTJ堆叠。 已经从该堆叠a中移除不超过约0.1微米厚的部分，以形成具有包括垂直部分的侧壁的基座，该垂直部分包括所有的自由层。
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公开(公告)号：US20080040915A1
公开(公告)日：2008-02-21
申请号：US11975265
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC: G11B5/127
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 将氙离子束与合适的掩模一起使用，将堆叠物离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有侧壁的基座包括垂直部分和缩短的锥形部分 ，已经形成。 随后根据需要形成导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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公开(公告)号：US20080034576A1
公开(公告)日：2008-02-14
申请号：US11975266
申请日：2007-10-18
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC: G11B5/127
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 使用一束氙离子与合适的掩模，MTJ堆叠被离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有包括垂直部分的侧壁的基座包括全部 自由层已形成。 然后以通常的方式形成纵向偏置和导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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公开(公告)号：US07320170B2
公开(公告)日：2008-01-22
申请号：US10827950
申请日：2004-04-20
Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
Inventor： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Abstract translation: 将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部 自由层已形成。 然后以通常的方式形成纵向偏置和导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。
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