发明申请
- 专利标题: Nonvolatile memory apparatus
- 专利标题(中): 非易失存储器
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申请号: US11079093申请日: 2005-03-15
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公开(公告)号: US20050232037A1公开(公告)日: 2005-10-20
- 发明人: Shinsuke Asari , Chiaki Shinagawa , Yasuhiro Nakamura , Motoki Kanamori , Atsushi Shiraishi
- 申请人: Shinsuke Asari , Chiaki Shinagawa , Yasuhiro Nakamura , Motoki Kanamori , Atsushi Shiraishi
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 优先权: JP2004-097458 20040330
- 主分类号: G06F12/16
- IPC分类号: G06F12/16 ; G11C29/00 ; G11C29/26
摘要:
The service life of memory cards is to be substantially elongated against the occurrence of faulty blocks. A control logic searches blocks in a nonvolatile memory cell array for any acquired fault on the basis of a fault-inviting code in a management information section. If any faulty block is detected, the faulty block will be subjected to write/read comparison of data to judge whether or not the data in the block are normal. Any block determined to be normal will undergo rewriting of its fault-inviting code and registered as a normal block. Further, the registered block is stored into a write management table in the management area as a writable block. This enables an essentially normal block judged faulty on account of an erratic error or some other reason to be restored.
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