发明申请
- 专利标题： Method for producing a semiconductor element
- 专利标题（中）： 半导体元件的制造方法
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申请号： US10503042申请日： 2003-01-30
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公开(公告)号： US20050239270A1公开(公告)日： 2005-10-27
- 发明人: Michael Fehrer , Berthold Hahn , Volker Harle , Stephan Kaiser , Frank Otte , Andreas Plössl
- 申请人： Michael Fehrer , Berthold Hahn , Volker Harle , Stephan Kaiser , Frank Otte , Andreas Plössl
- 优先权： DE10203795.7 20020131; DE10243757.2 20020920
- 国际申请： PCT/DE03/00260 WO 20030130
- 主分类号： B23K26/00
- IPC分类号： B23K26/00 ; B23K26/40 ; B23K101/40 ; C30B33/00 ; H01L21/20 ; H01L21/268 ; H01L21/762 ; H01L33/00 ; H01S5/323 ; H01L21/301
摘要：
A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.
公开/授权文献
- US07588998B2 Method for producing a semiconductor element 公开/授权日：2009-09-15
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