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    Radiation-emitting semiconductor element
    5.
    发明授权
    Radiation-emitting semiconductor element 有权
    辐射发射半导体元件

    公开(公告)号：US07446341B2

    公开(公告)日：2008-11-04

    申请号：US10669227

    申请日：2003-09-24

    申请人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

    发明人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

    IPC分类号： H01L27/15

    CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/46

    摘要： A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

    摘要翻译： 具有半导体本体（1）的辐射发射半导体部件具有活动区域（2），其中为了电接触连接，将图案化接触层（3）施加在半导体本体的表面上 。 间隙（4）分布在接触层（3）上，并且被提供用于在表面上形成未被接触层（3）覆盖的自由区域（5）。 自由区域（5）用镜子（6）覆盖。 接触连接和反射的两个功能的分离使得可以实现特别高的部件性能。

    Method for fabricating semiconductor layers
    6.
    发明授权
    Method for fabricating semiconductor layers 有权
    制造半导体层的方法

    公开(公告)号：US06770542B2

    公开(公告)日：2004-08-03

    申请号：US10324428

    申请日：2002-12-20

    申请人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

    发明人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

    IPC分类号： H01L2130

    CPC分类号： H01L21/2007

    摘要： A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

    摘要翻译： 提供了一种用于制造含有至少一个半导体层的有用层的方法，其中有用层与载体分离。 在这种情况下，将有用层施加到载体上，并且在接合温度下通过连接层将辅助载体施加到远离载体的有用层的该侧。 之后，载体在大于或等于接合温度的温度下剥离，并且小于连接层的熔点。 将有用层的至少一部分与辅助载体一起从载体上除去。

    Method for Production of a Radiation-Emitting Semiconductor Chip
    7.
    发明申请
    Method for Production of a Radiation-Emitting Semiconductor Chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号：US20080093611A1

    公开(公告)日：2008-04-24

    申请号：US11579194

    申请日：2004-04-29

    申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

    发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

    IPC分类号： H01L21/04 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

    摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。