发明申请
US20050239288A1 Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer
有权
用于可氧化导体层的顺序还原等离子体和惰性等离子体预处理方法
- 专利标题： Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer
- 专利标题（中）： 用于可氧化导体层的顺序还原等离子体和惰性等离子体预处理方法
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申请号： US10910182申请日： 2004-08-02
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公开(公告)号： US20050239288A1公开(公告)日： 2005-10-27
- 发明人: Chao-Hsien Peng , Jing-Cheng Lin , Ching-Hua Hsieh , Shau-Lin Shue
- 申请人： Chao-Hsien Peng , Jing-Cheng Lin , Ching-Hua Hsieh , Shau-Lin Shue
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/311 ; H01L21/3213 ; H01L21/44 ; H01L21/768
摘要：
A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer may be formed employing a chemical vapor deposition method, such as an atomic layer deposition method. When the deposition method employs a metal and carbon containing source material, the two-step plasma pretreatment provides the barrier layer with enhanced electrical properties.
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