发明申请
- 专利标题: Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor
- 专利标题(中): 氧化物烧结体,溅射靶,透明导电薄膜及其制造方法
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申请号: US11115971申请日: 2005-04-27
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公开(公告)号: US20050239660A1公开(公告)日: 2005-10-27
- 发明人: Yoshiyuki Abe , Tokuyuki Nakayama , Go Ohara , Riichiro Wake
- 申请人: Yoshiyuki Abe , Tokuyuki Nakayama , Go Ohara , Riichiro Wake
- 优先权: JP2004-131476 20040427
- 主分类号: H01L51/50
- IPC分类号: H01L51/50 ; B23K1/00 ; C04B35/00 ; C04B35/01 ; C04B35/495 ; C04B37/02 ; C23C14/08 ; C23C14/34 ; H01B5/14 ; H01B13/00 ; H05B33/14 ; H05B33/28
摘要:
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m3 furnace volume.
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