发明申请
US20050241672A1 Extraction of impurities in a semiconductor process with a supercritical fluid
审中-公开
用超临界流体萃取半导体工艺中的杂质
- 专利标题： Extraction of impurities in a semiconductor process with a supercritical fluid
- 专利标题（中）： 用超临界流体萃取半导体工艺中的杂质
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申请号： US10917772申请日： 2004-08-13
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公开(公告)号： US20050241672A1公开(公告)日： 2005-11-03
- 发明人: Phillip Matz , Sameer Ajmera , Ju-Ai Ruan , Jinyoung Kim , Zhijian Lu , Laura Matz
- 申请人： Phillip Matz , Sameer Ajmera , Ju-Ai Ruan , Jinyoung Kim , Zhijian Lu , Laura Matz
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： B08B6/00
- IPC分类号： B08B6/00 ; B08B7/00 ; H01L21/02 ; H01L21/3105
摘要：
A method comprises extracting impurities from one or more materials in a semiconductor device via treatment with a supercritical fluid (SCF). The SCF may comprise a solvent and one or more co-solvents. Solvents may comprise 1-hexanol, 1-propanol, 2-propanol, acetone, ammonia, argon, carbon dioxide, chlorotrifluoromethane, cyclohexane, dichlorodifluoromethane, ethane, ethyl alcohol, ethylene, methane, methanol, n-butane, n-hexane, nitrous oxide, n-pentane, propane, propylene, toluene, trichlorofluoromethane, trichloromethane, water, or combinations thereof.