发明申请
- 专利标题： Flash memory cell, flash memory device and manufacturing method thereof
- 专利标题（中）： 闪存单元，闪存设备及其制造方法
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申请号： US10835390申请日： 2004-04-30
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公开(公告)号： US20050242388A1公开(公告)日： 2005-11-03
- 发明人: Josef Willer , Frank Lau
- 申请人： Josef Willer , Frank Lau
- 主分类号： G11C16/02
- IPC分类号： G11C16/02 ; H01L21/336 ; H01L21/8247 ; H01L27/115 ; H01L29/76 ; H01L29/786
摘要：
The present invention relates to a flash memory cell comprising a silicon substrate having an active region comprising a channel region and source-/drain-regions, the active region comprising a projecting portion, which projecting portion at least comprising said channel region; a tunneling dielectric layer formed on the surface of said active region; a floating gate formed on the surface of said tunneling dielectric layer for storing electric charges; an inter-gates coupling dielectric layer formed on the surface of said floating gate, and a control gate formed on the surface of said inter-gates coupling dielectric layer, wherein said floating gate is formed to have a groove-like shape for at least partly encompassing said projecting portion of said active region. This invention further relates to a flash memory device comprising such flash memory cells, as well as a manufacturing method thereof.