发明申请
- 专利标题: Overhang support for a stacked semiconductor device, and method of forming thereof
- 专利标题(中): 叠层半导体器件的突出支撑及其形成方法
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申请号: US10881605申请日: 2004-06-30
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公开(公告)号: US20050248019A1公开(公告)日: 2005-11-10
- 发明人: Te-Tsung Chao , Mirng-Ji Lii , Chung-Yi Lin , Abel Chang
- 申请人: Te-Tsung Chao , Mirng-Ji Lii , Chung-Yi Lin , Abel Chang
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L23/02 ; H01L25/065 ; H01L25/07
摘要:
A stacked, multi-die semiconductor device and method of forming thereof. A preferred embodiment comprises disposing a stack of semiconductor dies to a substrate. The stacking arrangement is such that a lateral periphery of an upper die is cantilevered over a lower die thereby forming a recess. A supporting adhesive layer containing a filler is disposed upon the substrate about the lateral periphery of the lower die and substantially filling the recess. In one preferred embodiment, the filler comprises microspheres. In another preferred embodiment, the filler comprises a dummy die, an active die, or a passive die.
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