发明申请
- 专利标题： Air-gap type thin-film bulk acoustic resonator and fabrication method therefor
- 专利标题（中）： 气隙型薄膜体声波谐振器及其制造方法
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申请号： US11130157申请日： 2005-05-17
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公开(公告)号： US20050253670A1公开(公告)日： 2005-11-17
- 发明人: In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Jong-seok Kim
- 申请人： In-sang Song , Byeoung-ju Ha , Yun-kwon Park , Jong-seok Kim
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR2004-34969 20040517
- 主分类号： H01L41/09
- IPC分类号： H01L41/09 ; H01L41/187 ; H01L41/22 ; H03H3/02 ; H03H9/17 ; H03H9/24 ; H03H9/56
摘要：
An air-gap type thin-film bulk acoustic resonator. The air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.
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