发明申请
- 专利标题: Method and apparatus for forming nitrided silicon film
- 专利标题(中): 形成氮化硅膜的方法和装置
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申请号: US10520815申请日: 2003-07-04
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公开(公告)号: US20050255713A1公开(公告)日: 2005-11-17
- 发明人: Kohshi Taguchi , Masahiro Yoshimoto
- 申请人: Kohshi Taguchi , Masahiro Yoshimoto
- 优先权: JP2002-199122 20020708
- 国际申请: PCT/JP03/08552 WO 20030704
- 主分类号: C23C16/34
- IPC分类号: C23C16/34 ; C23C16/452 ; H01L21/318 ; C23C16/00 ; H05H1/24
摘要:
A method for forming a silicon nitride film which comprises heating a substrate (2) placed in the inner space (3) of a chamber (4) to a desired temperature, feeding a hexamethyl disilazane gas and a gas containing active species formed by the plasma excitation of an N2 gas to the chamber (4) holding the substrate (2), to thereby deposit a reaction product formed by the reaction of the hexaalkyldisilazan gas with the above active species and form the silicon nitride film. The method allows the formation of a silicon nitride film being reduced in the contents of carbon and hydrogen with safety and good efficiency.