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公开(公告)号：US20050255713A1
公开(公告)日：2005-11-17
申请号：US10520815
申请日：2003-07-04
申请人： Kohshi Taguchi , Masahiro Yoshimoto
发明人： Kohshi Taguchi , Masahiro Yoshimoto
IPC分类号： C23C16/34 , C23C16/452 , H01L21/318 , C23C16/00 , H05H1/24
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , H01L21/02222 , H01L21/02274 , H01L21/3185
摘要： A method for forming a silicon nitride film which comprises heating a substrate (2) placed in the inner space (3) of a chamber (4) to a desired temperature, feeding a hexamethyl disilazane gas and a gas containing active species formed by the plasma excitation of an N2 gas to the chamber (4) holding the substrate (2), to thereby deposit a reaction product formed by the reaction of the hexaalkyldisilazan gas with the above active species and form the silicon nitride film. The method allows the formation of a silicon nitride film being reduced in the contents of carbon and hydrogen with safety and good efficiency.
摘要翻译： 一种形成氮化硅膜的方法，其包括将放置在室（4）的内部空间（3）中的衬底（2）加热到所需温度，将六甲基二硅氮烷气体和包含由等离子体形成的活性物质的气体 将N 2 O 2气体激发到保持基板（2）的室（4），从而沉积由六烷基二硅氮烷气体与上述活性物质反应形成的反应产物，并形成氮化硅 电影。 该方法允许形成氮化硅膜，其安全性和效率降低了碳和氢的含量。
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公开(公告)号：US07776670B2
公开(公告)日：2010-08-17
申请号：US12304957
申请日：2007-05-30
IPC分类号： H01L21/00
CPC分类号： C23C16/30 , C23C16/401 , H01L51/5256
摘要： Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.
摘要翻译： 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大，可以提高硅薄膜与基板的一致性，并且几乎不发生裂纹和/或 剥离，提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法，并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板，其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。
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公开(公告)号：US20090321895A1
公开(公告)日：2009-12-31
申请号：US12304957
申请日：2007-05-30
CPC分类号： C23C16/30 , C23C16/401 , H01L51/5256
摘要： Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.
摘要翻译： 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大，可以提高硅薄膜与基板的一致性，并且几乎不发生裂纹和/或 剥离，提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法，并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板，其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。
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