发明申请
US20050258461A1 High-voltage LDMOSFET and applications therefor in standard CMOS
有权
高压LDMOSFET及其应用于标准CMOS
- 专利标题： High-voltage LDMOSFET and applications therefor in standard CMOS
- 专利标题（中）： 高压LDMOSFET及其应用于标准CMOS
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申请号： US10952708申请日： 2004-09-28
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公开(公告)号： US20050258461A1公开(公告)日： 2005-11-24
- 发明人: Bin Wang , William Colleran , Chih-Hsin Wang
- 申请人： Bin Wang , William Colleran , Chih-Hsin Wang
- 专利权人： Impinj, Inc., a Delaware Corporation
- 当前专利权人： Impinj, Inc., a Delaware Corporation
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/76 ; H01L29/78
摘要：
A high-voltage LDMOSFET includes a semiconductor substrate, in which a gate well is formed. A source well and a drain well are formed on either side of the gate well, and include insulating regions within them that do not reach the full depth. An insulating layer is disposed on the substrate, covering the gate well and a portion of the source well and the drain well. A conductive gate is disposed on the insulating layer. Biasing wells are formed adjacent the source well and the drain well. A deep well is formed in the substrate such that it communicates with the biasing wells and the gate well, while extending under the source well and the drain well, such as to avoid them. Biasing contacts at the top of the biasing wells bias the deep well, and therefore also the gate well.
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