发明申请
- 专利标题: Refractory metal-based electrodes for work function setting in semiconductor devices
- 专利标题(中): 用于半导体器件功能设置的耐火金属基电极
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申请号: US10852523申请日: 2004-05-24
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公开(公告)号: US20050258500A1公开(公告)日: 2005-11-24
- 发明人: Luigi Colombo , James Chambers , Mark Visokay
- 申请人: Luigi Colombo , James Chambers , Mark Visokay
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments, Incorporated
- 当前专利权人: Texas Instruments, Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/8234 ; H01L21/8238 ; H01L29/49 ; H01L29/76 ; H01L29/78
摘要:
The present invention provides, in one embodiment, a gate structure (100). The gate structure comprises a gate dielectric (105) and a gate (110). The gate dielectric includes a refractory metal and is located over a semiconductor substrate (115). The semiconductor substrate has a conduction band and a valence band. The gate is located over the gate dielectric and includes the refractory metal. The gate has a work function aligned toward the conduction band or the valence band. Other embodiments include an alternative gate structure (200), a method of forming a gate structure (300) for a semiconductor device (301) and a dual gate integrated circuit (400).
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