发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11138452申请日： 2005-05-27
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公开(公告)号： US20050266636A1公开(公告)日： 2005-12-01
- 发明人: Takuya Kitamura , Takashi Sakoh
- 申请人： Takuya Kitamura , Takashi Sakoh
- 申请人地址： JP KANAGAWA
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KANAGAWA
- 优先权： JP2004-162340 20040531
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/82 ; H01L21/822 ; H01L21/8234 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/118
摘要：
In a semiconductor device including a memory region and a logic region, one or more of a plurality of logic transistor connection plugs, buried in a first insulating layer and connected to a diffusion layer of a logic transistor, are left unconnected to a first interconnect provided in an upper layer.
公开/授权文献
- US07432597B2 Semiconductor device and method of manufacturing the same 公开/授权日：2008-10-07
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