发明申请
US20050272188A1 Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancement
有权
应变平衡结构具有拉伸应变硅通道和压缩应变硅 - 锗通道，用于CMOS性能提升
- 专利标题： Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancement
- 专利标题（中）： 应变平衡结构具有拉伸应变硅通道和压缩应变硅 - 锗通道，用于CMOS性能提升
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申请号： US11201990申请日： 2005-08-11
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公开(公告)号： US20050272188A1公开(公告)日： 2005-12-08
- 发明人: Yee-Chia Yeo , Chun-Chieh Lin , Fu-Liang Yang , Mong-Song Liang , Chenming Hu
- 申请人： Yee-Chia Yeo , Chun-Chieh Lin , Fu-Liang Yang , Mong-Song Liang , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L27/12 ; H01L31/109
摘要：
A method of fabricating a CMOS device wherein mobility enhancement of both the NMOS and PMOS elements is realized via strain induced band structure modification, has been developed. The NMOS element is formed featuring a silicon channel region under biaxial strain while the PMOS element is simultaneously formed featuring a SiGe channel region under biaxial compressive strain. A novel process sequence allowing formation of a thicker silicon layer overlying a SiGe layer, allows the NMOS channel region to exist in the silicon layer overlying a SiGe layer, allows the NMOS channel region to exist in the silicon layer which is under biaxial tensile strain enhancing electron mobility. The same novel process sequence results in the presence of a thinner silicon layer, overlying the same SiGe layer in the PMOS region, allowing the PMOS channel region to exist in the biaxial compressively strained SiGe layer, resulting in hole mobility enhancement.
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