发明申请
US20050272218A1 Method of forming metal lower electrode of a capacitor and method of selectively etching a metal layer for the same
审中-公开
形成电容器的金属下电极的方法及其选择性蚀刻金属层的方法
- 专利标题: Method of forming metal lower electrode of a capacitor and method of selectively etching a metal layer for the same
- 专利标题(中): 形成电容器的金属下电极的方法及其选择性蚀刻金属层的方法
-
申请号: US11145308申请日: 2005-06-03
-
公开(公告)号: US20050272218A1公开(公告)日: 2005-12-08
- 发明人: Young-Rae Park , Young-Ho Koh , Chang-Ki Hong
- 申请人: Young-Rae Park , Young-Ho Koh , Chang-Ki Hong
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2004-41437 20040607
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/02 ; H01L21/20 ; H01L21/8242 ; H01L23/52 ; H01L27/108
摘要:
A method of forming a cylindrical lower electrode of a capacitor in which metal is used as a lower electrode of a capacitor. A metal capping layer is used in order to protect the inner walls of the cylindrical metal lower electrode. A sacrificial insulating layer is patterned to form an aperture for forming the lower electrode. A metal lower electrode layer and the metal capping layer are sequentially formed. In order to electrically separate adjacent metal lower electrodes from each other, the metal capping layer and the metal lower electrode layer are simultaneously planarized until the sacrificial insulating layer is exposed. The sacrificial insulating layer and the metal capping layer that resides in the aperture are removed such that the cylindrical metal lower electrode having inner and outer walls is completed. Therefore, it is possible to simultaneously palanarize the metal capping layer and the metal lower electrode layer with respect to the sacrificial insulating layer such that it is possible to simplify processes for forming the lower electrodes.
信息查询
IPC分类: