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    METHOD OF MANUFACTURING A STACK-TYPE SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING A STACK-TYPE SEMICONDUCTOR DEVICE 审中-公开
    制造堆叠型半导体器件的方法

    公开(公告)号：US20080138960A1

    公开(公告)日：2008-06-12

    申请号：US11936965

    申请日：2007-11-08

    申请人： Sang-Yeob Han ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Young-Ho Koh ,  Seong-Kyu Yun ,  Jong-Heun Lim

    发明人： Sang-Yeob Han ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Young-Ho Koh ,  Seong-Kyu Yun ,  Jong-Heun Lim

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254 ,  H01L21/3212 ,  H01L21/32139

    摘要： A method of manufacturing a stack-type semiconductor device, in which a first substrate and a second substrate are prepared so that the first substrate has a surface layer and the second substrate has an insulation layer. The first substrate and the second substrate are attached to each other to allow the surface layer to make contact with the insulation layer. The first substrate is partially separated from the second substrate to allow the surface layer to remain on a central portion of the second substrate. A sacrificial layer pattern is then formed on an edge portion of the second substrate having the surface layer. The sacrificial layer pattern and the surface layer are planarized. Thus, the sacrificial layer pattern may reduce damage to the edge portion of the second substrate so that the second substrate may have an improved flatness.

    摘要翻译： 制造堆叠型半导体器件的方法，其中制备第一衬底和第二衬底，使得第一衬底具有表面层，并且第二衬底具有绝缘层。 第一基板和第二基板彼此附接以允许表面层与绝缘层接触。 第一衬底与第二衬底部分地分离以允许表面层保留在第二衬底的中心部分上。 然后在具有表面层的第二基板的边缘部分上形成牺牲层图案。 牺牲层图案和表面层被平坦化。 因此，牺牲层图案可以减小对第二基板的边缘部分的损伤，使得第二基板可以具有改善的平坦度。

    Method of forming metal lower electrode of a capacitor and method of selectively etching a metal layer for the same
    5.
    发明申请
    Method of forming metal lower electrode of a capacitor and method of selectively etching a metal layer for the same 审中-公开
    形成电容器的金属下电极的方法及其选择性蚀刻金属层的方法

    公开(公告)号：US20050272218A1

    公开(公告)日：2005-12-08

    申请号：US11145308

    申请日：2005-06-03

    申请人： Young-Rae Park ,  Young-Ho Koh ,  Chang-Ki Hong

    发明人： Young-Rae Park ,  Young-Ho Koh ,  Chang-Ki Hong

    IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L23/52 ,  H01L27/108

    CPC分类号： H01L27/10894 ,  H01L27/10852 ,  H01L28/91

    摘要： A method of forming a cylindrical lower electrode of a capacitor in which metal is used as a lower electrode of a capacitor. A metal capping layer is used in order to protect the inner walls of the cylindrical metal lower electrode. A sacrificial insulating layer is patterned to form an aperture for forming the lower electrode. A metal lower electrode layer and the metal capping layer are sequentially formed. In order to electrically separate adjacent metal lower electrodes from each other, the metal capping layer and the metal lower electrode layer are simultaneously planarized until the sacrificial insulating layer is exposed. The sacrificial insulating layer and the metal capping layer that resides in the aperture are removed such that the cylindrical metal lower electrode having inner and outer walls is completed. Therefore, it is possible to simultaneously palanarize the metal capping layer and the metal lower electrode layer with respect to the sacrificial insulating layer such that it is possible to simplify processes for forming the lower electrodes.

    摘要翻译： 一种形成电容器的圆柱形下电极的方法，其中金属用作电容器的下电极。 为了保护圆柱形金属下电极的内壁，使用金属覆盖层。 图案化牺牲绝缘层以形成用于形成下电极的孔。 依次形成金属下电极层和金属覆盖层。 为了将相邻的金属下电极彼此电分离，金属覆盖层和金属下电极层同时被平坦化，直到牺牲绝缘层暴露。 除去驻留在孔中的牺牲绝缘层和金属覆盖层，使得具有内壁和外壁的圆柱形金属下电极完成。 因此，可以相对于牺牲绝缘层同时进行金属覆盖层和金属下电极层的平坦化，使得可以简化用于形成下电极的工艺。