发明申请
- 专利标题： Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
- 专利标题（中）： 使用中间退火制造包括带状工程超晶格的半导体器件的方法
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申请号： US11136834申请日： 2005-05-25
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公开(公告)号： US20050272239A1公开(公告)日： 2005-12-08
- 发明人: Marek Hytha , Robert Stephenson , Scott Kreps
- 申请人： Marek Hytha , Robert Stephenson , Scott Kreps
- 申请人地址： US MA Waltham
- 专利权人： RJ Mears, LLC
- 当前专利权人： RJ Mears, LLC
- 当前专利权人地址： US MA Waltham
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L21/8238 ; H01L29/10 ; H01L29/15 ; H01L29/78 ; H01L21/00 ; H01L21/28 ; H01L21/3205 ; H01L21/76
摘要：
A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include performing at least one anneal prior to completing forming of the superlattice.
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