发明申请
- 专利标题： LOW CAPACITANCE FET FOR OPERATION AT SUBTHRESHOLD VOLTAGES
- 专利标题（中）： 用于低压电压运行的低电容FET
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申请号： US10710007申请日： 2004-06-11
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公开(公告)号： US20050275045A1公开(公告)日： 2005-12-15
- 发明人: Brent Anderson , Andres Bryant , William Clark , Edward Nowak
- 申请人： Brent Anderson , Andres Bryant , William Clark , Edward Nowak
- 申请人地址： US NY Armonk 10504
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk 10504
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/76 ; H01L29/78 ; H01L29/786
摘要：
A field effect transistor (FET) has underlap regions adjacent to the channel doping region. The underlap regions have very low dopant concentrations of less than 1×1017/cc or 5×1016/cc and so tend to have a high resistance. The underlap regions reduce overlap capacitance and thereby increase switching speed. High resistance of the underlap regions is not problematic at subthreshold voltages because the channel doping region also has a high resistance at subthreshold voltages. Consequently, the present FET has low capacitance and high speed and is particularly well suited for operation in the subthreshold regime.
公开/授权文献
- US07009265B2 Low capacitance FET for operation at subthreshold voltages 公开/授权日：2006-03-07