发明申请
- 专利标题: Focused ion beam apparatus
- 专利标题(中): 聚焦离子束装置
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申请号: US11151425申请日: 2005-06-14
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公开(公告)号: US20050279952A1公开(公告)日: 2005-12-22
- 发明人: Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
- 申请人: Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 优先权: JP2004-177261 20040615
- 主分类号: G21K5/10
- IPC分类号: G21K5/10
摘要:
In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
公开/授权文献
- US07235798B2 Focused ion beam apparatus 公开/授权日:2007-06-26
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