发明申请
- 专利标题： Method of forming high voltage devices with retrograde well
- 专利标题（中）： 用逆行井形成高压装置的方法
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申请号： US10877450申请日： 2004-06-25
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公开(公告)号： US20050285218A1公开(公告)日： 2005-12-29
- 发明人: Kuo-Ming Wu , Chen-Bau Wu , Ruey-Hsin Liu , Shun-Liang Hsu
- 申请人： Kuo-Ming Wu , Chen-Bau Wu , Ruey-Hsin Liu , Shun-Liang Hsu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L29/08 ; H01L29/78
摘要：
A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate region, wherein the retrograde well reduces a dopant concentration on the surface of the substrate, thereby minimizing damages to the gate region.
公开/授权文献
- US07221021B2 Method of forming high voltage devices with retrograde well 公开/授权日：2007-05-22
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