发明申请
- 专利标题： System and method of forming a split-gate flash memory cell
- 专利标题（中）： 形成分闸快闪存储单元的系统和方法
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申请号： US10875429申请日： 2004-06-24
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公开(公告)号： US20050287740A1公开(公告)日： 2005-12-29
- 发明人: Michael Wu , Eugene Chu , Fei Chen , Yuh-Hwa Chang , David Ho , Kuang Yang , Eric Chao
- 申请人： Michael Wu , Eugene Chu , Fei Chen , Yuh-Hwa Chang , David Ho , Kuang Yang , Eric Chao
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/423
摘要：
A system and method for forming a split-gate flash memory cell is disclosed. In one example, a method for forming a semiconductor device includes: supplying a substrate; forming a floating gate with alternate etch and passivation steps; and forming a control gate proximate to and partially overlying the floating gate.
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IPC分类:
