发明申请
- 专利标题： Method of making a semiconductor device manufacturing mask substrate
- 专利标题（中）： 制造半导体器件制造掩模基板的方法
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申请号： US11101396申请日： 2005-04-08
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公开(公告)号： US20050287797A1公开(公告)日： 2005-12-29
- 发明人: Takeshi Morita
- 申请人： Takeshi Morita
- 优先权： JP250759/2001 20010821; JP097163/2002 20020329
- 主分类号： G03F1/70
- IPC分类号： G03F1/70 ; H01L21/027 ; H01L21/3205 ; H01L21/768 ; H01L21/82 ; H01L23/52 ; H01L23/522 ; H01L21/4763
摘要：
A method of making a semiconductor device manufacturing mask, which makes it possible to suppress a semiconductor-device global step and simply manufacture a highly reliable semiconductor device. Square dummy patterns each having one side of, for example, 0.25 μm or less are inserted into an area other than an actual pattern lying within a semiconductor device manufacturing mask to thereby uniformize a pattern density, enable etching processing without changing conditions set for every semiconductor device manufacturing mask an prevent an increase in global step of a post-CMP interlayer insulating film.
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