发明申请
US20050288199A1 Composition for removing photoresist residue and polymer residue
有权
用于除去光致抗蚀剂残留物和聚合物残余物的组合物
- 专利标题： Composition for removing photoresist residue and polymer residue
- 专利标题（中）： 用于除去光致抗蚀剂残留物和聚合物残余物的组合物
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申请号： US11168142申请日： 2005-06-28
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公开(公告)号： US20050288199A1公开(公告)日： 2005-12-29
- 发明人: Takuo Oowada , Kaoru Ikegami , Norio Ishikawa
- 申请人： Takuo Oowada , Kaoru Ikegami , Norio Ishikawa
- 申请人地址： JP Tokyo
- 专利权人： Kanto Kagaku Kabushiki Kaisha
- 当前专利权人： Kanto Kagaku Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-191934 20040629
- 主分类号： C11D7/32
- IPC分类号： C11D7/32 ; G03F7/42
摘要：
A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.
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