公开(公告)号：US07563754B2

公开(公告)日：2009-07-21

申请号：US11168142

申请日：2005-06-28

申请人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： C11D7/50

CPC分类号： G03F7/423 ,  G03F7/425

摘要： A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

摘要翻译： 提供了一种用于在干蚀刻和灰化后残留在半导体衬底上的光致抗蚀剂残留物和聚合物残渣的组合物，该组合物含有至少一种类型的氟化合物，至少一种类型的有机酸，至少一种类型的有机 胺和水，所述组合物的pH为4〜7，除水以外的成分的总含量为整个组合物的0.3〜30质量％。

公开(公告)号：US07816312B2

公开(公告)日：2010-10-19

申请号：US11371444

申请日：2006-03-09

申请人： Takuo Oowada ,  Kaoru Ikegami

发明人： Takuo Oowada ,  Kaoru Ikegami

IPC分类号： C11D7/50

CPC分类号： G03F7/426 ,  G03F7/425

摘要： The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.

摘要翻译： 本发明提供一种用于光致抗蚀剂剥离溶液的组合物，其在半导体电路器件的制造工艺中在干蚀刻之后保留了光致抗蚀剂和损伤的光致抗蚀剂层的优良剥离性能，而不侵蚀新的布线材料和层间绝缘膜材料，以及 剥离光致抗蚀剂和损伤的光致抗蚀剂层的过程。 使用含有乙炔醇化合物和有机磺酸化合物中的至少一种的光致抗蚀剂剥离溶液的组合物，以及多元醇及其衍生物中的至少一种。

公开(公告)号：US07368064B2

公开(公告)日：2008-05-06

申请号：US11115275

申请日：2005-04-27

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： B44C1/22

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 灰化抗蚀图案 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。

公开(公告)号：US20050288199A1

公开(公告)日：2005-12-29

申请号：US11168142

申请日：2005-06-28

申请人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： C11D7/32 ,  G03F7/42

CPC分类号： G03F7/423 ,  G03F7/425

摘要： A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

摘要翻译： 提供了一种用于在干蚀刻和灰化后残留在半导体衬底上的光致抗蚀剂残留物和聚合物残渣的组合物，该组合物含有至少一种类型的氟化合物，至少一种类型的有机酸，至少一种类型的有机 胺和水，所述组合物的pH为4〜7，除水以外的成分的总含量为整个组合物的0.3〜30质量％。

公开(公告)号：US07943516B2

公开(公告)日：2011-05-17

申请号：US12076688

申请日：2008-03-21

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 灰化抗蚀图案 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。

公开(公告)号：US20080214002A1

公开(公告)日：2008-09-04

申请号：US12076688

申请日：2008-03-21

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

公开(公告)号：US20060205623A1

公开(公告)日：2006-09-14

申请号：US11371444

申请日：2006-03-09

申请人： Takuo Oowada ,  Kaoru Ikegami

发明人： Takuo Oowada ,  Kaoru Ikegami

IPC分类号： C11D7/32

CPC分类号： G03F7/426 ,  G03F7/425

摘要： The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.

摘要翻译： 本发明提供一种用于光致抗蚀剂剥离溶液的组合物，其在半导体电路器件的制造工艺中在干蚀刻之后保留了光致抗蚀剂和损伤的光致抗蚀剂层的优良剥离性能，而不侵蚀新的布线材料和层间绝缘膜材料，以及 剥离光致抗蚀剂和损伤的光致抗蚀剂层的过程。 使用含有乙炔醇化合物和有机磺酸化合物中的至少一种的光致抗蚀剂剥离溶液的组合物，以及多元醇及其衍生物中的至少一种。

公开(公告)号：US20050236362A1

公开(公告)日：2005-10-27

申请号：US11115275

申请日：2005-04-27

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  C09K13/00 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 通过灰化抵抗图案。 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗溶液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。