公开(公告)号：US11905490B2

公开(公告)日：2024-02-20

申请号：US17275629

申请日：2019-09-19

申请人： Kanto Kagaku Kabushiki Kaisha

发明人： Areji Takanaka

IPC分类号： C11D3/37 ,  C11D11/00 ,  C11D1/16 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  H01L21/02

CPC分类号： C11D11/0047 ,  C11D1/16 ,  C11D7/08 ,  C11D7/261 ,  C11D7/266 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/50 ,  H01L21/02068

摘要： An object of the present invention is to provide a cleaning liquid that effectively removes in a short time organic residues and abrasive grains derived from a slurry in a semiconductor substrate in which a Co contact plug and/or Co wiring are present.
The present invention relates to a cleaning liquid composition for cleaning a substrate having a Co contact plug and/or Co wiring, which contains one or more reducing agents and water. Furthermore, the present invention relates to a cleaning liquid composition for cleaning a substrate having Co and not having Cu, which contains one or more reducing agents and water and has a pH of 3 or more and less than 12.

公开(公告)号：US11279904B2

公开(公告)日：2022-03-22

申请号：US16473625

申请日：2017-12-26

申请人： Kanto Kagaku Kabushiki Kaisha

发明人： Kikue Morita ,  Areji Takanaka ,  Takuo Ohwada

IPC分类号： C11D11/00 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/36 ,  C11D17/00 ,  C23G1/20 ,  H01L21/02 ,  H01L21/321 ,  H01L23/532

摘要： Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.

公开(公告)号：US20210340500A1

公开(公告)日：2021-11-04

申请号：US17274543

申请日：2019-09-09

申请人： TOKYO INSTITUTE OF TECHNOLOGY ,  THE UNIVERSITY OF TOKYO ,  KANTO KAGAKU KABUSHIKI KAISHA

发明人： Shoen KUME ,  Nobuaki SHIRAKI ,  Kazuya MAEDA ,  Hiroyuki KUSUHARA ,  Masaya ISHIKAWA ,  Teruhiko WATANABE

IPC分类号： C12N5/071

摘要： As a method for producing enterocytes derived from pluripotent stem cells and having functions corresponding to those of actual enterocytes, a method for producing enterocytes using an enterocyte differentiation medium containing a GSK3 inhibitor, and at least one selected from the group consisting of an activator of a hepatocyte growth factor receptor, an adrenal cortex hormone, calcitriol, and dimethyl sulfoxide is provided.

公开(公告)号：US20210207085A1

公开(公告)日：2021-07-08

申请号：US16755490

申请日：2018-10-09

申请人： TOKYO INSTITUTE OF TECHNOLOGY ,  KANTO KAGAKU KABUSHIKI KAISHA ,  CHUGAI SEIYAKU KABUSHIKI KAISHA

发明人： Shoen KUME ,  Nobuaki SHIRAKI ,  Hiroyuki YAMAGUCHI ,  Tomoaki INOUE ,  Toshito NAKAGAWA ,  Jumpei KIYOKAWA

IPC分类号： C12N5/071

摘要： The present invention provides, in order to prepare matured hepatocytes analogous in various points to primary hepatocytes, a method for preparing hepatocytes or cells that can be differentiated into hepatocytes from pluripotent stem cells, comprising the steps of: (1) culturing the pluripotent stem cells in a medium containing an activator of an activin receptor-like kinase-4,7; (2) culturing the cells obtained in the step (1) in a medium containing a bone morphogenetic factor and a fibroblast growth factor; (3) culturing the cells obtained in the step (2) in a medium containing an activator of a hepatocyte growth factor receptor and an activator of an oncostatin M receptor; and (4) culturing the cells obtained in the step (3) to obtain hepatocytes or cells that can be differentiated into hepatocytes, wherein in at least one of the steps (2), (3) and (4), cells are cultured on a high-density collagen gel membrane.

公开(公告)号：US20180051237A1

公开(公告)日：2018-02-22

申请号：US15510810

申请日：2015-10-30

申请人： Kanto Kagaku Kabushiki Kaisha

发明人： Yasuyuki Seino

IPC分类号： C11D11/00 ,  C11D3/00 ,  C23F1/14 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  C11D7/10 ,  C11D7/50

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/32 ,  C11D7/5022 ,  C23F1/14 ,  H01L21/02071 ,  H01L21/32138

摘要： To provide a composition for removing photoresist residue and/or polymer residue formed in a process for producing a semiconductor circuit element, and a removal method employing same. A composition for removing photoresist residue and/or polymer residue, the composition containing saccharin and water, and the pH being no greater than 9.7.

公开(公告)号：US20180026176A1

公开(公告)日：2018-01-25

申请号：US15548543

申请日：2016-01-19

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED ,  KANTO KAGAKU KABUSHIKI KAISHA

发明人： Fumimasa HORIKIRI ,  Kenji SHIBATA ,  Kazutoshi WATANABE ,  Kazufumi SUENAGA ,  Masaki NOGUCHI ,  Kenji KUROIWA

IPC分类号： H01L41/316 ,  C23C14/34 ,  H01L41/113 ,  H01L41/332 ,  H01L41/187

CPC分类号： H01L41/316 ,  C23C14/08 ,  C23C14/34 ,  H01L21/308 ,  H01L41/113 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/332

摘要： This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

公开(公告)号：US20160297844A1

公开(公告)日：2016-10-13

申请号：US15183490

申请日：2016-06-15

申请人： Kanto Kagaku Kabushiki Kaisha

发明人： Ryohei Yamaguchi ,  Ken-ichi Fujita

IPC分类号： C07F17/02 ,  C07C45/00 ,  C07C201/12 ,  B01J7/02 ,  C07C51/16 ,  C07B41/06 ,  C07B41/08 ,  C01B3/32 ,  B01J31/22 ,  C07J13/00

CPC分类号： C07F17/02 ,  B01J7/02 ,  B01J31/2295 ,  B01J2231/763 ,  B01J2231/766 ,  B01J2531/827 ,  C01B3/0015 ,  C01B3/06 ,  C01B3/22 ,  C01B3/326 ,  C01B2203/02 ,  C01B2203/0227 ,  C01B2203/0277 ,  C01B2203/1041 ,  C01B2203/1064 ,  C01B2203/1205 ,  C01B2203/1211 ,  C01B2203/1217 ,  C01B2203/1223 ,  C01B2203/1229 ,  C07B41/06 ,  C07B41/08 ,  C07C45/002 ,  C07C51/16 ,  C07C201/12 ,  C07C2601/08 ,  C07C2601/14 ,  C07J13/007 ,  Y02E60/328 ,  Y02E60/36 ,  Y02P20/132 ,  C07C47/02 ,  C07C47/06 ,  C07C47/32 ,  C07C47/52 ,  C07C49/04 ,  C07C49/213 ,  C07C49/395 ,  C07C49/403

摘要： Objects of the present invention are to provide a novel dehydrogenation reaction catalyst, to provide a method that can produce a ketone, an aldehyde, and a carboxylic acid with high efficiency from an alcohol, and to provide a method for efficiently producing hydrogen from an alcohol, formic acid, or a formate, and they are accomplished by a catalyst containing an organometallic compound of Formula (1).

公开(公告)号：US20160083675A1

公开(公告)日：2016-03-24

申请号：US14784983

申请日：2014-04-07

申请人： KANTO KAGAKU KABUSHIKI KAISHA

发明人： Kikue Morita ,  Chiyoko Horike ,  Keisuke Fukaya ,  Takuo Ohwada

IPC分类号： C11D7/32 ,  H01L21/02 ,  C11D7/36

CPC分类号： C11D7/3281 ,  C11D3/28 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/36 ,  C11D11/0047 ,  C11D17/08 ,  H01L21/02074

摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.

摘要翻译： 本发明的目的是提供一种清洁液体组合物，其用于清洁在半导体元件等电子器件的制造工序中经过化学机械研磨（CMP）等处理的基板等。 用于清洗具有Cu布线的基板的清洗液组合物包括一种或多种碱性化合物和一种或多种含有氮原子的杂环芳族化合物，其氢离子浓度（pH）为8-11。

公开(公告)号：US08580136B2

公开(公告)日：2013-11-12

申请号：US13358226

申请日：2012-01-25

申请人： Kenji Ohshiro ,  Ryou Kouno ,  Hideki Takahashi

发明人： Kenji Ohshiro ,  Ryou Kouno ,  Hideki Takahashi

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： C23F1/18

摘要： The problem of the present invention is to provide an etching solution composition that can etch with high accuracy a metal-laminated film pattern comprising thin films of copper and a copper alloy, can form an excellent pattern shape, and has practically excellent and stable characteristics with long solution life, and to provide an etching method using such etching solution composition. The present invention relates to an etching method for etching a metal-laminated film having a layer consisting of copper and a layer consisting of a copper alloy containing copper, using an etching solution composition comprising phosphoric acid, nitric acid, acetic acid and water, as well as to said etching solution composition.

摘要翻译： 本发明的问题是提供一种可以高精度地蚀刻包含铜和铜合金薄膜的金属层叠膜图案的蚀刻溶液组合物，可以形成优异的图案形状，并且具有实际上优异且稳定的特性， 长的溶液寿命，并提供使用这种蚀刻溶液组合物的蚀刻方法。 本发明涉及使用包含磷酸，硝酸，乙酸和水的蚀刻溶液组合物蚀刻具有由铜构成的层的金属层压膜和含有铜的铜合金的层的蚀刻方法，作为 以及所述蚀刻溶液组合物。

公开(公告)号：US20130231271A1

公开(公告)日：2013-09-05

申请号：US13820265

申请日：2011-09-02

申请人： Takuo Ohwada

发明人： Takuo Ohwada

IPC分类号： G03F7/42 ,  C11D7/26

CPC分类号： G03F7/422 ,  C11D7/261 ,  C11D7/263 ,  C11D7/265 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/31133

摘要： Provided are a photoresist residue and polymer residue removing liquid composition, and a method of removing the residue used therewith, for removing photoresist residue and polymer residue produced during a process of manufacturing a semiconductor circuit element having metallic wiring. Specifically, the composition does not contain nitrogen-containing organic hydroxyl compounds, ammonia or fluorine compounds, and contains an aliphatic polycarboxylic acid having a melting point of 25° C. or higher with an excellent residue removing property and having a metallic oxide main component as the residue removing component. The photoresist residue and polymer residue removing liquid composition, and the method of removing the residue used therewith, is capable of preventing the aliphatic polycarboxylic acid from being recrystallized by evaporation of water after a solution has adhered around a cleaning device liquid ejecting nozzle or a cleaning tank and a chamber. In the photoresist residue and polymer residue removing liquid composition containing the aliphatic polycarboxylic acid with a melting point of 25° C. or higher, the removing liquid contains an organic solvent that is miscible with water and has a vapor pressure of 17 mm Hg or less at 25° C. and a hydroxyl group within the structure.

摘要翻译： 提供了光致抗蚀剂残留物和聚合物残渣除去液体组合物，以及除去其中使用的残留物的方法，用于除去在制造具有金属布线的半导体电路元件的工艺期间产生的光致抗蚀剂残留物和聚合物残留物。 具体而言，该组合物不含有含氮有机羟基化合物，氨或氟化合物，并且含有熔点为25℃以上且脂肪族除去性优异且具有金属氧化物主成分的脂肪族多元羧酸为 残渣除去组分。 光致抗蚀剂残渣和聚合物残渣除去液体组合物以及除去残留物的除去方法能够防止在溶液附着在清洗装置液体喷射喷嘴或清洗之后使水分蒸发而使脂肪族多元羧酸重结晶 坦克和一个房间。 在含有熔点为25℃以上的脂肪族多元羧酸的光致抗蚀剂残渣和聚合物残渣除去液组合物中，除去液含有与水混溶的有机溶剂，蒸气压为17mmHg以下 在25℃和该结构内的羟基。