发明申请
US20060000808A1 Polishing solution of metal and chemical mechanical polishing method 审中-公开
金属抛光液和化学机械抛光方法

Polishing solution of metal and chemical mechanical polishing method
摘要:
A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a polishing solution for metal comprising a specific compound; and an oxidizing agent; allowing a polishing face and a face to be polished to be moved relatively to each other while the polishing face and the face to be polished are in contact with each other via the polishing solution for metal; and performing polishing with a contact pressure between the polishing face and the face to be polished in the range of from 1000 to 25000 Pa.
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