发明申请
US20060003188A1 ITO thin film, method of producing the same, transparent conductive film, and touch panel 审中-公开
ITO薄膜,其制造方法,透明导电膜和触摸面板

ITO thin film, method of producing the same, transparent conductive film, and touch panel
摘要:
A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.
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