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    Amorphous oxide semiconductor and thin film transistor using the same
    2.
    发明授权
    Amorphous oxide semiconductor and thin film transistor using the same 有权
    非晶氧化物半导体和使用其的薄膜晶体管

    公开(公告)号：US08129718B2

    公开(公告)日：2012-03-06

    申请号：US12534436

    申请日：2009-08-03

    申请人： Ryo Hayashi ,  Hideyuki Omura ,  Hideya Kumomi ,  Yuzo Shigesato

    发明人： Ryo Hayashi ,  Hideyuki Omura ,  Hideya Kumomi ,  Yuzo Shigesato

    IPC分类号： H01L29/10

    CPC分类号： H01L29/78663 ,  H01L29/7869

    摘要： There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm−3 or less.

    摘要翻译： 提供了包含氢和铟（In）和锌（Zn）的至少一种元素的非晶氧化物半导体，含有1×1020cm-3以上至1×1022的氢原子和氘原子之一的非晶氧化物半导体 cm 3以下，除了非晶形氧化物半导体中的过量氧（OEX）和氢之间的键之外，氧与氢之间的键的密度为1×1018cm-3以下。

    AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME
    4.
    发明申请
    AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME 有权
    使用其的非晶氧化物半导体和薄膜晶体管

    公开(公告)号：US20100051938A1

    公开(公告)日：2010-03-04

    申请号：US12534436

    申请日：2009-08-03

    申请人： Ryo Hayashi ,  Hideyuki Omura ,  Hideya Kumomi ,  Yuzo Shigesato

    发明人： Ryo Hayashi ,  Hideyuki Omura ,  Hideya Kumomi ,  Yuzo Shigesato

    IPC分类号： H01L33/00 ,  H01L29/12 ,  H01L29/786 ,  H01L21/20

    CPC分类号： H01L29/78663 ,  H01L29/7869

    摘要： There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm−3 or less.

    摘要翻译： 提供了包含氢和铟（In）和锌（Zn）的至少一种元素的非晶氧化物半导体，含有1×1020cm-3以上至1×1022的氢原子和氘原子之一的非晶氧化物半导体 cm 3以下，除了非晶形氧化物半导体中的过量氧（OEX）和氢之间的键之外，氧与氢之间的键的密度为1×1018cm-3以下。

    ITO thin film, method of producing the same, transparent conductive film, and touch panel
    7.
    发明申请
    ITO thin film, method of producing the same, transparent conductive film, and touch panel 审中-公开
    ITO薄膜，其制造方法，透明导电膜和触摸面板

    公开(公告)号：US20060003188A1

    公开(公告)日：2006-01-05

    申请号：US11184811

    申请日：2005-07-20

    申请人： Shingo Ohno ,  Yoshinori Iwabuchi ,  Masato Yoshikawa ,  Yuzo Shigesato ,  Masato Kon

    发明人： Shingo Ohno ,  Yoshinori Iwabuchi ,  Masato Yoshikawa ,  Yuzo Shigesato ,  Masato Kon

    IPC分类号： H01L21/44 ,  B32B19/00

    CPC分类号： C23C14/3464 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/3414

    摘要： A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.

    摘要翻译： 通过在溅射成膜期间在低温下加热基板来形成结晶ITO透明导电薄膜。 结晶ITO透明导电薄膜通过使用包含In 2 N 3 O 3和SnO 2 2的ITO靶形成，其中SnO 2的重量百分比 基于ITO靶中的In 2 N 3 O 3和SnO 2 N 2的总重量，SUB> 2 <6％或更小 在溅射成膜期间在90〜170℃下加热基板。 具有高强度和机械耐久性的结晶ITO膜可以通过在低温下加热而形成，其满足基板的耐热性，而不需要在成膜后退火。 提供了包含聚合物膜4和形成在其上的ITO透明导电膜5的透明导电膜，以及包括透明导电膜的触摸面板。

    Amorphous oxide semiconductor and thin film transistor using the same
    8.
    发明授权
    Amorphous oxide semiconductor and thin film transistor using the same 失效
    非晶氧化物半导体和使用其的薄膜晶体管

    公开(公告)号：US08426243B2

    公开(公告)日：2013-04-23

    申请号：US13353077

    申请日：2012-01-18

    申请人： Ryo Hayashi ,  Hideyuki Omura ,  Hideya Kumomi ,  Yuzo Shigesato

    发明人： Ryo Hayashi ,  Hideyuki Omura ,  Hideya Kumomi ,  Yuzo Shigesato

    IPC分类号： H01J21/00 ,  H01L21/16

    CPC分类号： H01L29/78663 ,  H01L29/7869

    摘要： There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm−3 or less.

    摘要翻译： 提供了包含氢和铟（In）和锌（Zn）的至少一种元素的非晶氧化物半导体，含有1×1020cm-3以上至1×1022的氢原子和氘原子之一的非晶氧化物半导体 cm 3以下，除了非晶形氧化物半导体中的过量氧（OEX）和氢之间的键之外，氧与氢之间的键的密度为1×1018cm-3以下。

    Transparent electroconductive film and process for producing same
    9.
    发明授权
    Transparent electroconductive film and process for producing same 失效
    透明导电膜及其制造方法

    公开(公告)号：US07674357B2

    公开(公告)日：2010-03-09

    申请号：US10876525

    申请日：2004-06-28

    申请人： Takeshi Hattori ,  Kunio Saegusa ,  Yuzo Shigesato

    发明人： Takeshi Hattori ,  Kunio Saegusa ,  Yuzo Shigesato

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3464 ,  C23C14/06

    摘要： There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

    摘要翻译： 提供：（1）含有InSbO 4的透明导电膜的制造方法，其包括同时溅射的步骤：（i）溅射用靶（A），其包含In，Sb和O，其原子比 的Sb / In为0.9〜1.1，以及（ii）溅射用靶（B），其包含Sb，（2）透明导电膜，其含有In，Sb和O，并且其Sb / In 为0.8〜1.5，（3）溅射用靶，其含有In，Sb，O，Sb / In的原子比为1.2〜2.0。

    Transparent electroconductive film and process for producing same
    10.
    发明授权
    Transparent electroconductive film and process for producing same 失效
    透明导电膜及其制造方法

    公开(公告)号：US06773636B2

    公开(公告)日：2004-08-10

    申请号：US10103120

    申请日：2002-03-22

    申请人： Takeshi Hattori ,  Kunio Saegusa ,  Yuzo Shigesato

    发明人： Takeshi Hattori ,  Kunio Saegusa ,  Yuzo Shigesato

    IPC分类号： H01B108

    CPC分类号： C23C14/3464 ,  C23C14/06

    摘要： There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

    摘要翻译： 提供：（1）含有InSbO 4的透明导电膜的制造方法，其包括同时溅射的步骤：（i）溅射用靶（A），其包含In，Sb和O，其原子比 的Sb / In为0.9〜1.1，以及（ii）溅射用靶（B），其包含Sb，（2）透明导电膜，其含有In，Sb和O，并且其Sb / In 为0.8〜1.5，（3）溅射用靶，其含有In，Sb，O，Sb / In的原子比为1.2〜2.0。