发明申请
- 专利标题: Use of active temperature control to provide emmisivity independent wafer temperature
- 专利标题(中): 使用主动温度控制提供独立的晶片温度
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申请号: US10882894申请日: 2004-06-30
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公开(公告)号: US20060004493A1公开(公告)日: 2006-01-05
- 发明人: Jack Hwang , Robert James , Eric Lambert , Jonathan Leonard , Richard Brindos , Karson Knutson , Mark Armstrong , Justin Sandford
- 申请人: Jack Hwang , Robert James , Eric Lambert , Jonathan Leonard , Richard Brindos , Karson Knutson , Mark Armstrong , Justin Sandford
- 主分类号: G05D23/00
- IPC分类号: G05D23/00
摘要:
Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.
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