公开(公告)号：US20060286807A1

公开(公告)日：2006-12-21

申请号：US11156381

申请日：2005-06-16

申请人： Jack Hwang ,  Robert James ,  Eric Lambert ,  Jonathan Leonard ,  Richard Brindos ,  Karson Knutson ,  Mark Armstrong ,  Justin Sandford

发明人： Jack Hwang ,  Robert James ,  Eric Lambert ,  Jonathan Leonard ,  Richard Brindos ,  Karson Knutson ,  Mark Armstrong ,  Justin Sandford

IPC分类号： H01L21/306 ,  G01R31/00 ,  H01L21/461

CPC分类号： H01L21/67115 ,  H01L21/67248

摘要： Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.

公开(公告)号：US20060004493A1

公开(公告)日：2006-01-05

申请号：US10882894

申请日：2004-06-30

申请人： Jack Hwang ,  Robert James ,  Eric Lambert ,  Jonathan Leonard ,  Richard Brindos ,  Karson Knutson ,  Mark Armstrong ,  Justin Sandford

发明人： Jack Hwang ,  Robert James ,  Eric Lambert ,  Jonathan Leonard ,  Richard Brindos ,  Karson Knutson ,  Mark Armstrong ,  Justin Sandford

IPC分类号： G05D23/00

CPC分类号： G05D23/27 ,  G05D23/1928

摘要： Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.

摘要翻译： 实施例涉及具有大于硅晶片的发射率的衬底或晶片边缘支撑件，其中边缘支撑件用于在处理期间支撑晶片以在晶片上或晶片中形成电路器件。 实施例还包括温度传感器，导热气体射流和光子能量可以被引导以在退火期间感测和控制边缘支撑件和/或晶片边缘的温度，以减少边缘处的温度滚降或卷绕，与 晶圆的中心。 具体地说，在加工过程中使用具有大于或等于晶片的发射率的边缘支撑件允许指向边缘支撑和/或晶片边缘的氦气射流减少退火期间在边缘处的温度上升。 因为来自不同工艺和退火位置的晶圆都可能具有不同的灵敏度，所以使用反馈回路将使得一个边缘环能够支持具有一定范围的不同灵敏度的晶片的均匀退火。

公开(公告)号：US20090323759A1

公开(公告)日：2009-12-31

申请号：US12217063

申请日：2008-06-30

申请人： Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli ,  Jack Hwang

发明人： Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli ,  Jack Hwang

IPC分类号： G01J5/06 ,  H05B6/00

CPC分类号： H05B6/645 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0862

摘要： Temperature measurement using a pyrometer in a processing chamber is described. The extraneous light received by the pyrometer is reduced. In one example, a photodetector is used to measure the intensity of light within the processing chamber at a defined wavelength. A temperature circuit is used to convert the measured light intensity to a temperature signal, and a doped optical window between a heat source and a workpiece inside processing chamber is used to absorb light at the defined wavelength directed at the workpiece from the heat source.

摘要翻译： 描述了在处理室中使用高温计的温度测量。 高温计所接收的外部光线减少。 在一个示例中，光电检测器用于以规定的波长测量处理室内的光的强度。 使用温度电路将测量的光强度转换为温度信号，并且在处理室内的热源和工件之间的掺杂光学窗口用于从热源吸收指向工件的限定波长的光。

公开(公告)号：US20080242117A1

公开(公告)日：2008-10-02

申请号：US11694934

申请日：2007-03-30

申请人： Panchapakesan Ramanarayanan ,  Karson Knutson ,  Jack Hwang ,  John Leonard ,  Sridhar Govindaraju

发明人： Panchapakesan Ramanarayanan ,  Karson Knutson ,  Jack Hwang ,  John Leonard ,  Sridhar Govindaraju

IPC分类号： H01L21/324

CPC分类号： H01L21/324 ,  H01L21/67115

摘要： In some embodiments radiation incident on a wafer is provided to perform an annealing process, and the wafer is cooled at an edge portion to reduce temperature and stress on the wafer. Other embodiments are described and claimed.

摘要翻译： 在一些实施例中，提供入射在晶片上的辐射以执行退火处理，并且晶片在边缘部分被冷却以降低晶片上的温度和应力。 描述和要求保护其他实施例。

公开(公告)号：US07892971B2

公开(公告)日：2011-02-22

申请号：US12164560

申请日：2008-06-30

申请人： Jack Hwang ,  Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli

发明人： Jack Hwang ,  Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli

IPC分类号： H01L21/44

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L29/665

摘要： An annealing method and apparatus for semiconductor manufacturing is described. The method and apparatus allows an anneal that can span a thermal budget and be tailored to a specific process and its corresponding activation energy. In some cases, the annealing method spans a timeframe from about 1 millisecond to about 1 second. An example for this annealing method includes a sub-second anneal method where a reduction in the formation of nickel pipes is achieved during salicide processing. In some cases, the method and apparatus combine the rapid heating rate of a sub-second anneal with a thermally conductive substrate to provide quick cooling for a silicon wafer. Thus, the thermal budget of the sub-second anneal methods may span the range from conventional RTP anneals to flash annealing processes (including duration of the anneal, as well as peak temperature). Other embodiments are described.

摘要翻译： 描述用于半导体制造的退火方法和装置。 该方法和装置允许可以跨越热预算的退火，并且可以针对具体过程及其对应的激活能量进行定制。 在一些情况下，退火方法跨越约1毫秒至约1秒的时间范围。 该退火方法的一个实例包括二次退火方法，其中在自杀化处理期间实现镍管形成的减少。 在一些情况下，该方法和装置将亚秒级退火的快速加热速率与导热基板相结合，为硅晶片提供快速冷却。 因此，次秒退火方法的热预算可以跨越从常规RTP退火到闪光退火工艺（包括退火的持续时间，以及峰值温度）的范围。 描述其他实施例。

公开(公告)号：US20050211697A1

公开(公告)日：2005-09-29

申请号：US10815068

申请日：2004-03-26

申请人： Karson Knutson ,  Jack Hwang

发明人： Karson Knutson ,  Jack Hwang

IPC分类号： F27B5/14 ,  F27B17/00 ,  F27D11/00 ,  H01L21/00

CPC分类号： H01L21/67115 ,  F27B17/0025

摘要： A method, apparatus, and system including a reflecting device having a plurality of reflecting zones with associated reflectivities for reflecting light from a flash lamp, are described herein.

摘要翻译： 本文描述了一种包括具有多个反射区域的反射装置的方法，装置和系统，其具有用于反射来自闪光灯的光的相关联的反射率。

公开(公告)号：US07758238B2

公开(公告)日：2010-07-20

申请号：US12217063

申请日：2008-06-30

申请人： Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli ,  Jack Hwang

发明人： Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli ,  Jack Hwang

IPC分类号： G01K5/00 ,  G01K13/00 ,  G01J5/00

CPC分类号： H05B6/645 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0862

摘要： Temperature measurement using a pyrometer in a processing chamber is described. The extraneous light received by the pyrometer is reduced. In one example, a photodetector is used to measure the intensity of light within the processing chamber at a defined wavelength. A temperature circuit is used to convert the measured light intensity to a temperature signal, and a doped optical window between a heat source and a workpiece inside processing chamber is used to absorb light at the defined wavelength directed at the workpiece from the heat source.

摘要翻译： 描述了在处理室中使用高温计的温度测量。 高温计所接收的外部光线减少。 在一个示例中，光电检测器用于以规定的波长测量处理室内的光的强度。 使用温度电路将测量的光强度转换为温度信号，并且在处理室内的热源和工件之间的掺杂光学窗口用于从热源吸收指向工件的限定波长的光。

公开(公告)号：US20090325392A1

公开(公告)日：2009-12-31

申请号：US12164560

申请日：2008-06-30

申请人： Jack Hwang ,  Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli

发明人： Jack Hwang ,  Sridhar Govindaraju ,  Karson Knutson ,  Harold Kennel ,  Aravind Killampalli

IPC分类号： H01L21/26

CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L29/665

摘要： An annealing method and apparatus for semiconductor manufacturing is described. The method and apparatus allows an anneal that can span a thermal budget and be tailored to a specific process and its corresponding activation energy. In some cases, the annealing method spans a timeframe from about 1 millisecond to about 1 second. An example for this annealing method includes a sub-second anneal method where a reduction in the formation of nickel pipes is achieved during salicide processing. In some cases, the method and apparatus combine the rapid heating rate of a sub-second anneal with a thermally conductive substrate to provide quick cooling for a silicon wafer. Thus, the thermal budget of the sub-second anneal methods may span the range from conventional RTP anneals to flash annealing processes (including duration of the anneal, as well as peak temperature). Other embodiments are described.

摘要翻译： 描述用于半导体制造的退火方法和装置。 该方法和装置允许可以跨越热预算的退火，并且可以针对具体过程及其对应的激活能量进行定制。 在一些情况下，退火方法跨越约1毫秒至约1秒的时间范围。 该退火方法的一个实例包括二次退火方法，其中在自杀化处理期间实现镍管形成的减少。 在一些情况下，该方法和装置将亚秒级退火的快速加热速率与导热基板相结合，为硅晶片提供快速冷却。 因此，次秒退火方法的热预算可以跨越从常规RTP退火到闪光退火工艺（包括退火的持续时间，以及峰值温度）的范围。 描述其他实施例。

公开(公告)号：US20060065849A1

公开(公告)日：2006-03-30

申请号：US10952969

申请日：2004-09-28

申请人： Jack Hwang ,  Stephen Cea ,  Paul Davids ,  Karson Knutson

发明人： Jack Hwang ,  Stephen Cea ,  Paul Davids ,  Karson Knutson

IPC分类号： G21K5/02

CPC分类号： H01J61/40 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115

摘要： Flash lamp apparatuses that generate electromagnetic radiation with wavelengths greater than and/or less than a defined range of wavelengths are disclosed.

公开(公告)号：US09054178B2

公开(公告)日：2015-06-09

申请号：US14174822

申请日：2014-02-06

申请人： Mark T. Bohr ,  Tahir Ghani ,  Nadia M. Rahhai-Orabi ,  Subhash M. Joshi ,  Joseph M. Steigerwald ,  Jason W. Klaus ,  Jack Hwang ,  Ryan Mackiewicz

发明人： Mark T. Bohr ,  Tahir Ghani ,  Nadia M. Rahhai-Orabi ,  Subhash M. Joshi ,  Joseph M. Steigerwald ,  Jason W. Klaus ,  Jack Hwang ,  Ryan Mackiewicz

IPC分类号： H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L21/768 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49

CPC分类号： H01L21/76897 ,  H01L21/28123 ,  H01L21/28229 ,  H01L21/28255 ,  H01L21/283 ,  H01L21/28562 ,  H01L21/31105 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/535 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/42364 ,  H01L29/456 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/512 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78 ,  H01L29/785 ,  H01L2029/7858 ,  H01L2924/0002 ,  H01L2924/00

摘要： A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.

摘要翻译： 晶体管包括衬底，衬底上的一对间隔物，衬底上的栅介质层和一对间隔物之间​​，栅极电介质层上的栅电极层和一对衬垫之间的绝缘帽层 栅极电极层和一对间隔物之间​​，以及与该对间隔物相邻的一对扩散区域。 绝缘盖层形成了与栅极自对准的防蚀结构，并防止接触蚀刻暴露栅电极，从而防止栅极和接触之间的短路。 绝缘体盖层能够进行自对准触点，允许对图案化限制更坚固的较宽触点的初始图案化。