发明申请
US20060006386A1 Lateral semiconductor component with a drift zone having at least one field electrode
审中-公开
具有漂移区的侧向半导体元件具有至少一个场电极
- 专利标题： Lateral semiconductor component with a drift zone having at least one field electrode
- 专利标题（中）： 具有漂移区的侧向半导体元件具有至少一个场电极
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申请号： US10926581申请日： 2004-08-25
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公开(公告)号： US20060006386A1公开(公告)日： 2006-01-12
- 发明人: Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
- 申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
- 优先权： DE10339488.5-33 20030827
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
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