发明申请
- 专利标题： Metal oxide semiconductor (MOS) varactor
- 专利标题（中）： 金属氧化物半导体（MOS）变容二极管
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申请号： US11174743申请日： 2005-07-05
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公开(公告)号： US20060006431A1公开(公告)日： 2006-01-12
- 发明人: Yuh-Sheng Jean , Ta-Hsun Yeh
- 申请人： Yuh-Sheng Jean , Ta-Hsun Yeh
- 专利权人： Realtek Semiconductor Corp.
- 当前专利权人： Realtek Semiconductor Corp.
- 优先权： TW93120175 20040706
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/336
摘要：
A metal oxide semiconductor (MOS) varactor includes a first terminal and a second terminal, and the MOS varactor comprises a substrate; a deep well, formed on the substrate; and a first MOS device, formed on the deep well; wherein a gate of the first MOS device is coupled to the first terminal, and a source and a drain of the first MOS device are coupled to the second terminal.