- 专利标题: Semiconductor integrated circuit device
-
申请号: US11202352申请日: 2005-08-12
-
公开(公告)号: US20060006480A1公开(公告)日: 2006-01-12
- 发明人: Masao Shinozaki , Kenji Nishimoto , Takashi Akioka , Yutaka Kohara , Sanae Asari , Shusaku Miyata , Shinji Nakazato
- 申请人: Masao Shinozaki , Kenji Nishimoto , Takashi Akioka , Yutaka Kohara , Sanae Asari , Shusaku Miyata , Shinji Nakazato
- 专利权人: Renesas Technology Corporation and Hitachi ULSI Systems Co., Ltd.
- 当前专利权人: Renesas Technology Corporation and Hitachi ULSI Systems Co., Ltd.
- 优先权: JP2000-383728 20001218; JP2001-161630 20010530
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
公开/授权文献
- US07547971B2 Semiconductor integrated circuit device 公开/授权日:2009-06-16
信息查询
IPC分类: