According to one exemplary embodiment, a structure in a semiconductor die comprises a metal pad situated in an interconnect metal layer, where the metal pad comprises copper. The structure further comprises an interlayer dielectric layer situated over the metal pad. The structure further comprises a terminal via defined in the interlayer dielectric layer, where the terminal via is situated on the metal pad. The terminal via extends along only one side of the metal pad. The structure further comprises a terminal metal layer situated on the interlayer dielectric layer and in the terminal via. The structure further comprises a dielectric liner situated on the terminal metal layer, where a bond pad opening is defined in the dielectric liner, and where the bond pad opening exposes a portion of the terminal metal layer. The interlayer dielectric layer is situated between the exposed portion of the terminal metal layer and metal pad.