Invention Application
- Patent Title: Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
- Patent Title (中): 制造多晶硅薄膜的方法和使用其制造晶体管的方法
-
Application No.: US11003326Application Date: 2004-12-06
-
Publication No.: US20060008957A1Publication Date: 2006-01-12
- Inventor: Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
- Applicant: Jang-yeon Kwon , Min-koo Han , Se-young Cho , Kyung-bae Park , Do-young Kim , Min-cheol Lee , Sang-myeon Han , Takashi Noguchi , Young-soo Park , Ji-sim Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR2003-88423 20031206
- Main IPC: H01L21/205
- IPC: H01L21/205
Abstract:
A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
Public/Granted literature
Information query
IPC分类:
