- 专利标题: Multi step electrodeposition process for reducing defects and minimizing film thickness
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申请号: US11232026申请日: 2005-09-20
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公开(公告)号: US20060011485A1公开(公告)日: 2006-01-19
- 发明人: Bulent Basol , Cyprian Uzoh , Homayoun Talieh
- 申请人: Bulent Basol , Cyprian Uzoh , Homayoun Talieh
- 主分类号: C25D5/10
- IPC分类号: C25D5/10 ; C25D5/02
摘要:
The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.
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